教师简介
丁召,男,毕业于美国阿肯色大学,博士,教授,电子邮件:zding@gzu.edu.cn。
招生学科方向:集成电路工程、新一代电子信息、微电子学与固体电子学。
主要研究领域与方向:低维半导体材料,电子器件模拟与设计。
主要贡献
2017年以来主要承担的科研项目:
主持的科研项目:
国家自然科学基金委员会,地区项目,61564002,三维有序量子点的可控制备、结构表征与物性研究,2016-01至2019-12,54万元,已结题,主持
国家自然科学基金委员会,地区项目,60866001,InGaAs表面相变过程的MBE/STM研究,2009-01至2011-12,31万元,已结题,主持
2017年以来主要发表学术论著:
(1)Xuefei Liu; Zhibin,Gao;Vei,Wang;Zijiang Luo; Bing Lv; Zhao Ding*; ZhaofuZhang*,Extrapolated Defect Transition Level in Two-Dimensional Materials: The Case ofCharged Native Point Defects in Monolayer Hexagonal Boron Nitride, ACS Applied Materials&Interfaces,2020,12(14):17055-17061
(2) Xuefei Liu; Zhaofu Zhang *; Zijiang Luo; Bing Lv; Zhao Ding*; Tunable ElectronicProperties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain EngineeringNanomaterials,2019,9(12):0-1647.
(3)Yi, Wang; Xiang, Guo; Jiemin, Wei; Chen, Yang; Zijiang, Luo; Jihong, Wang; ZhaoDing*; Influence of Ga(Al)As substrates on surface morphology and critical thickness of InGaAs quantum dots, Current Applied Physics, 2019, 19(5):557-562.
(4)XueFei, Liu; ZiJiang, Luo; Xun, Zhou; JieMin, Wei; Yi, Wang; Xiang, Guo; QiZhiLang; Zhao, Ding*; Theoretical study of stress and strain distribution in coupled pyramidalInAs quantum dots embedded in GaAs by finite element method, European Physical Journal B2019,92(7):0-138.
(5)XueFei, Liu; Luo ZiJiang; Zhou; JieMin, Wei; Yi, Wang; Xiang, Guo; QiZhi, Lang:Zha0, Ding*; Calculation of electronic and optical properties of surface InxGal-xP andindium-gradient structure on GaP (001),Computational Materials Science, 2018, 153:356-362.